• 60W RF MOSFET Amplifier Power Module for 12.5V mobile radios that operate in 135-175MHz range
• Battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without gate voltage (VGG = 0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60dB. Output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. Nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG = 5V, the typical gate current is 1mA
• Designed for non-linear FM modulation, may be also used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power
• Enhancement-mode MOSFET transistors (IDD = ~0 @ VDD = 12.5V, VGG = 0V)
• Pout > 60W, ηT > 40% @ VDD = 12.5V, VGG = 5V, Pin = 50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current(IGG): 1mA
• Module Size: 66 x 21 x 9.88mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
• Brand Name: MITSUBISHI
• Lead-Free Type
• RoHS Compliant
• Package Outline: H2S
• VHF 50-300MHz / High-Output Power Part Number: RA13H1317M, RA30H0608M, RA30H1317M, RA30H1317M1, RA30H1721M, RA30H2127M, RA33H1516M1, RA35H1516M, RA60H1317M, RA60H1317M1A.
• Compatible with other wireless communication products
• Supply form: antistatic tray, 10 modules / tray
• Mass stock on-hand merchandise supply
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